Author Affiliations
Abstract
1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
2 University of Chinese Academy of Sciences, Beijing 100049, China
3 Zhongtian Technology Group Co. Ltd, Nantong 226009, China
4 School of Opto-Electronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
We investigate a novel GaAs-based laser power converters (LPCs) grown by metal-organic chemical vapor deposition (MOCVD), which uses a single monolithic structure with six junctions connected by tunnel junctions to obtain a high output voltage. The LPCs with diameters of active aperture of 2 mm and 4 mm were fabricated and tested. The test results show that under an 808 nm laser, two LPCs both show an open circuit voltage of above 6.5 V. A maximum power conversion efficiency of 50.2% is obtained by 2 mm sample with laser power of 0.256 W, and an output electric power of 1.9 W with laser power of 4.85 W is obtained by 4 mm sample. The performances of the LPCs are deteriorated under illumination of high flux, and the 4 mm sample shows a higher laser power tolerance.
光电子快报（英文版）
2017, 13(1): 21
1 西安理工大学 自动化与信息工程学院, 陕西 西安 710054
2 中国科学院苏州纳米技术与纳米仿生研究所 纳米器件重点实验室, 江苏 苏州 215125
采用MOCVD生长技术在InP衬底上成功实现了晶格失配的3 μm In0.68Ga0.32As薄膜生长.通过As组分的改变, 利用张应变和压应变交替补偿的InAsxP1-x应变缓冲层结构来释放由于晶格失配所产生的应力, 在InP衬底上得到了与In0.68Ga0.32As晶格匹配的InAsxP1-x“虚拟”衬底, 通过对缓冲层厚度的优化, 使应力能够在“虚拟”衬底上完全豫弛.通过原子力显微镜(AFM)、高分辨XRD、透射电镜(TEM)和光致发光(PL)等测试分析表明, 这种释放应力的方法能够有效提高In0.68Ga0.32As外延层的晶体质量.
应力释放 In0.68Ga0.32As In0.68Ga0.32As strain relaxation InAsxP1-x InAsxP1-x
